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| STD4LNK60Z STF4LNK60Z N-channel 600 V, 2.2 , 3.3 A, TO-220FP, DPAK Zener-protected SuperMESHTM Power MOSFET Preliminary Data Features Type STD4LNK60Z STF4LNK60Z VDSS 600 V 600 V RDS(on) max < 2.7 < 2.7 ID 3.3 A 3.3 A Pw 70 W 25 W 3 1 2 1 3 Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Improved ESD capability Figure 1. TO-220FP DPAK Application Internal schematic diagram Switching applications Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage Power MOSFETs including revolutionary MDmeshTM products. Table 1. Device summary Marking 4LNK60Z 4LNK60Z Package DPAK TO-220FP Packaging Tape and reel Tube Order codes STD4LNK60Z STF4LNK60Z July 2008 Rev 1 1/11 www.st.com 11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STD4LNK60Z - STF4LNK60Z Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STD4LNK60Z - STF4LNK60Z Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM PTOT Absolute maximum ratings Value Parameter TO-220FP Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor 3.3 (1) 2 (1) 13.2(1) 25 0.2 2500 600 30 3.3 2 13.2 70 0.56 -DPAK V V A A A W W/C V Unit VISO Tj Tstg Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) Operating junction temperature Storage temperature -55 to 150 C 1. Limited by package Table 3. Symbol Rthj-case Rthj-pcb Rthj-amb Tl Thermal data Value Parameter TO-220FP Thermal resistance junction-case Thermal resistance junction-pcb(1) Thermal resistance junction-amb Maximum lead temperature for soldering purpose 5 -62.5 300 DPAK 1.79 50 -C/W C/W C/W C Unit 1. Minimum footprint Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (1) Value TBD TBD Unit A mJ 1. Starting Tj = 25 C, ID = IAR, VDD = 50 V 3/11 Electrical characteristics STD4LNK60Z - STF4LNK60Z 2 Electrical characteristics (TCASE=25 C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDS = Max rating, VDS = Max rating,Tc=125 C VGS = 30 V VDS= VGS, ID = 50 A VGS= 10 V, ID= 2.7 A 2 3 2.2 Min. 600 1 50 100 Typ. Max. Unit V A A nA V 4 2.7 Table 6. Symbol Ciss Coss Crss Coss eq. Qg Qgs Qgd Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 400 50 10 44.4 14 TBD TBD Max. Unit pF pF pF pF nC nC nC VDS =25 V, f=1 MHz, VGS=0 VDS = 0 to 480 V, VGS =0 VDD= 480 V, ID = 3.3 A VGS = 10 V (see Figure 3) Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Test conditions VDD= 300 V, ID= 3.3 A, RG=4.7 , VGS=10 V (see Figure 2) VDD=300 V, ID= 3.3 A, RG=4.7 , VGS= 10 V (see Figure 2) Min. Typ. 7.5 19.5 Max. Unit ns ns Turn-off delay time Fall time 28 24 ns ns 4/11 STD4LNK60Z - STF4LNK60Z Electrical characteristics Table 8. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 3.3 A, VGS=0 ISD= 3.3 A, di/dt = 100 A/s, VDD=480 V, Tj=150C (see Figure 7) TBD TBD TBD Test conditions Min. Typ. Max. 3.3 13.2 TBD Unit A A V ns nC A VSD(2) trr Qrr IRRM 1. Pulse width limited by package 2. Pulsed: pulse duration = 300s, duty cycle 1.5% 5/11 Test circuits STD4LNK60Z - STF4LNK60Z 3 Figure 2. Test circuits Switching times test circuit for resistive load Figure 3. Gate charge test circuit Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped inductive load test circuit Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform 6/11 STD4LNK60Z - STF4LNK60Z Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/11 Package mechanical data STD4LNK60Z - STF4LNK60Z TO-220FP mechanical data Dim. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.80 2.9 15.90 9 3 mm. Min. 4.40 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.40 10 16 30.6 10.60 3.6 16.40 9.30 3.2 1.126 0.385 0.114 0.626 0.354 0.118 Typ Max. 4.60 2.7 2.75 0.70 1.00 1.50 1.50 5.20 2.70 10.40 Min. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch Typ. Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 Dia F1 D F G1 H F2 E L2 L5 123 L4 7012510-I 8/11 G STD4LNK60Z - STF4LNK60Z Package mechanical data TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4.70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G 9/11 Revision history STD4LNK60Z - STF4LNK60Z 5 Revision history Table 9. Date 24-Jul-2008 Document revision history Revision 1 Initial release. Changes 10/11 STD4LNK60Z - STF4LNK60Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11 |
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